UG06BHA0G

制造商零件号
UG06BHA0G
制造商
Taiwan Semiconductor
包装/案例
-
数据表
UG06BHA0G
描述
DIODE GEN PURP 100V 600MA TS-1
库存
35000

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制造商 :
Taiwan Semiconductor
产品分类 :
分立半导体产品 > 二极管 - 整流器 - 单
Capacitance @ Vr, F :
9pF @ 4V, 1MHz
Current - Average Rectified (Io) :
600mA
Current - Reverse Leakage @ Vr :
5 µA @ 100 V
Diode Type :
Standard
Mounting Type :
Through Hole
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
T-18, Axial
Product Status :
Active
Reverse Recovery Time (trr) :
15 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TS-1
Voltage - DC Reverse (Vr) (Max) :
100 V
Voltage - Forward (Vf) (Max) @ If :
950 mV @ 600 mA
数据列表
UG06BHA0G

制造商相关产品

目录相关产品

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    DIODE SCHOTTKY 30V 200MA SOT23-3
  • onsemi
    DIODE GEN PURP 100V 200MA SOD123
  • Comchip Technology
    DIODE GEN PURP 1KV 1A DO41

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