STQ1NC45R-AP

制造商 :

STMicroelectronics

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

500mA (Tc)

Drain to Source Voltage (Vdss) :

450 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

160 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power Dissipation (Max) :

3.1W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.5Ohm @ 500mA, 10V

Supplier Device Package :

TO-92-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 250µA