R6004JND3TL1

制造商 :

ROHM Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.5 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

260 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

60W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.43Ohm @ 2A, 15V

Supplier Device Package :

TO-252

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

7V @ 450µA