TPAR3D S1G

Hersteller-Teilenummer
TPAR3D S1G
Hersteller
Taiwan Semiconductor
Paket/Karton
-
Datenblatt
TPAR3D S1G
Beschreibung
DIODE AVALANCHE 200V 3A TO277A
Lagerbestand
8989

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Hersteller :
Taiwan Semiconductor
Produktkategorie :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
58pF @ 4V, 1MHz
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
10 µA @ 200 V
Diode Type :
Avalanche
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-277, 3-PowerDFN
Product Status :
Active
Reverse Recovery Time (trr) :
120 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TO-277A (SMPC)
Voltage - DC Reverse (Vr) (Max) :
200 V
Voltage - Forward (Vf) (Max) @ If :
1.55 V @ 3 A
Datenblätter
TPAR3D S1G

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