TPAR3D S1G
- Hersteller-Teilenummer
- TPAR3D S1G
- Hersteller
- Taiwan Semiconductor
- Paket/Karton
- -
- Datenblatt
- TPAR3D S1G
- Beschreibung
- DIODE AVALANCHE 200V 3A TO277A
- Lagerbestand
- 8989
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- Hersteller :
- Taiwan Semiconductor
- Produktkategorie :
- Discrete Semiconductor Products > Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 58pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 200 V
- Diode Type :
- Avalanche
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-277, 3-PowerDFN
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 120 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- TO-277A (SMPC)
- Voltage - DC Reverse (Vr) (Max) :
- 200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.55 V @ 3 A
- Datenblätter
- TPAR3D S1G
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