BCV62AE6327HTSA1

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 2mA, 5V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-253-4, TO-253AA

Power - Max :

300mW

Product Status :

Not For New Designs

Supplier Device Package :

PG-SOT-143-3D

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

30V