EMT18T2R

Hersteller :

ROHM Semiconductor

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 10mA, 2V

Frequency - Transition :

260MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

EMT6

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

12V