BFS481H6327

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

20mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 8V

Frequency - Transition :

8GHz

Gain :

20dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

6-VSSOP, SC-88, SOT-363

Power - Max :

175mW

Product Status :

Active

Supplier Device Package :

-

Transistor Type :

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max) :

12V