NE58219-T1-A

Hersteller :

CEL (California Eastern Laboratories)

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

60mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA, 5V

Frequency - Transition :

5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

SC-75, SOT-416

Power - Max :

100mW

Product Status :

Obsolete

Supplier Device Package :

3-SuperMiniMold (19)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V