- Hersteller :
- Microsemi
- Produktkategorie :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 420mA, 5V
- Frequency - Transition :
- 3.7GHz
- Gain :
- 6dB ~ 6.3dB
- Mounting Type :
- Chassis Mount
- Noise Figure (dB Typ @ f) :
- -
- Operating Temperature :
- 200°C (TJ)
- Package / Case :
- 55BT
- Power - Max :
- 9W
- Product Status :
- Obsolete
- Supplier Device Package :
- 55BT
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 22V
- Datenblätter
- 23A025
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