BCV27E6327

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA, 5V

Frequency - Transition :

170MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

360 mW

Product Status :

Active

Supplier Device Package :

PG-SOT23-3-1

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1V @ 100µA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

30 V