NTE102A

Hersteller :

NTE Electronics, Inc.

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

25µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

69 @ 300mA, 0V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

90°C (TJ)

Package / Case :

TO-1-3 Metal Can

Power - Max :

650 mW

Product Status :

Active

Supplier Device Package :

TO-1

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

170mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

-