2SD1047P-E

Hersteller :

onsemi

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

12 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A, 5V

Frequency - Transition :

15MHz

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

120 W

Product Status :

Obsolete

Supplier Device Package :

TO-3PB

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max) :

140 V