BUB323ZT4G

Hersteller :

onsemi

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

10 A

Current - Collector Cutoff (Max) :

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A, 4.6V

Frequency - Transition :

2MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max :

150 W

Product Status :

Active

Supplier Device Package :

D²PAK

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Voltage - Collector Emitter Breakdown (Max) :

350 V