TTD1409B,S4X

Hersteller :

Toshiba Electronic Devices and Storage Corporation

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

6 A

Current - Collector Cutoff (Max) :

20µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

600 @ 2A, 2V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Power - Max :

2 W

Product Status :

Active

Supplier Device Package :

TO-220SIS

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2V @ 40mA, 4A

Voltage - Collector Emitter Breakdown (Max) :

400 V