BF517E6327HTSA1

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

25 mA

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2mA, 1V

Frequency - Transition :

2.5GHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

280 mW

Product Status :

Obsolete

Supplier Device Package :

PG-SOT23

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

400mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

15 V