TSC966CT A3G

Hersteller :

Taiwan Semiconductor

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

300 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V

Frequency - Transition :

50MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

1 W

Product Status :

Obsolete

Supplier Device Package :

TO-92

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

400 V