DRDNB16W-7

Hersteller :

Diodes Incorporated

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

600 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA, 5V

Frequency - Transition :

200 MHz

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200 mW

Product Status :

Active

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

SOT-363

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V