VWM200-01P

Hersteller-Teilenummer
VWM200-01P
Hersteller
Littelfuse
Paket/Karton
-
Datenblatt
VWM200-01P
Beschreibung
MOSFET 6N-CH 100V 210A V2
Lagerbestand
35000

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Hersteller :
Littelfuse
Produktkategorie :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
210A
Drain to Source Voltage (Vdss) :
100V
FET Feature :
Standard
FET Type :
6 N-Channel (3-Phase Bridge)
Gate Charge (Qg) (Max) @ Vgs :
430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 175°C (TJ)
Package / Case :
V2-PAK
Power - Max :
-
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
5.2mOhm @ 100A, 10V
Supplier Device Package :
V2-PAK
Vgs(th) (Max) @ Id :
4V @ 2mA
Datenblätter
VWM200-01P

Herstellerbezogene Produkte

Katalogbezogene Produkte

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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