SI4808DY-T1-E3
- Hersteller-Teilenummer
- SI4808DY-T1-E3
- Hersteller
- Vishay
- Paket/Karton
- -
- Datenblatt
- SI4808DY-T1-E3
- Beschreibung
- MOSFET 2N-CH 30V 5.7A 8SOIC
- Lagerbestand
- 35000
Angebot anfordern (RFQ)
- * Kontaktname:
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- Hersteller :
- Vishay
- Produktkategorie :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power - Max :
- 1.1W
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 7.5A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 800mV @ 250µA (Min)
- Datenblätter
- SI4808DY-T1-E3
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Katalogbezogene Produkte
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