
A3I35D025GNR1
- Hersteller-Teilenummer
- A3I35D025GNR1
- Hersteller
- NXP Semiconductors
- Paket/Karton
- -
- Datenblatt
- A3I35D025GNR1
- Beschreibung
- AIRFAST RF POWER GAN TRANSISTOR
- Lagerbestand
- 35000
Angebot anfordern (RFQ)
- * Kontaktname:
- * Unternehmen:
- * E-Mail:
- * Telefon:
- * Kommentar:
- * Captcha:
-
- Hersteller :
- NXP Semiconductors
- Produktkategorie :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - RF
- Current - Test :
- -
- Current Rating (Amps) :
- -
- Frequency :
- 3.2GHz ~ 4GHz
- Gain :
- 27.8dB
- Noise Figure :
- -
- Package / Case :
- TO-270-17 Variant, Gull Wing
- Power - Output :
- 3.4W
- Product Status :
- Obsolete
- Supplier Device Package :
- TO-270WBG-17
- Transistor Type :
- LDMOS
- Voltage - Rated :
- 28 V
- Voltage - Test :
- -
- Datenblätter
- A3I35D025GNR1
Herstellerbezogene Produkte
Katalogbezogene Produkte
Ähnliche Produkte
Teil | Hersteller | Lagerbestand | Beschreibung |
---|---|---|---|
A3I35D012WGNR1 | NXP Semiconductors | 35,000 | AIRFAST RF LDMOS WIDEBAND INTEGR |
A3I35D012WNR1 | NXP Semiconductors | 35,000 | AIRFAST RF LDMOS WIDEBAND INTEGR |
A3I35D025NR1 | NXP Semiconductors | 35,000 | AIRFAST RF POWER GAN TRANSISTOR |
A3I35D025WGNR1 | NXP Semiconductors | 35,000 | AIRFAST RF LDMOS WIDEBAND INTEGR |
A3I35D025WNR1 | NXP Semiconductors | 35,000 | AIRFAST RF LDMOS WIDEBAND INTEGR |