3N170 TO-72 4L

Hersteller :

Linear Integrated Systems, Inc.

Produktkategorie :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30mA

Drain to Source Voltage (Vdss) :

25 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 135°C (TJ)

Package / Case :

TO-206AF, TO-72-4 Metal Can

Power Dissipation (Max) :

300mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

200Ohm @ 100µA, 10V

Supplier Device Package :

TO-72-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±35V

Vgs(th) (Max) @ Id :

2V @ 10µA