RUS100N02TB

Hersteller :

ROHM Semiconductor

Produktkategorie :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

2250 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power Dissipation (Max) :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

12mOhm @ 10A, 4.5V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 1mA