RM115N65T2

Hersteller :

Rectron USA

Produktkategorie :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

115A (Tc)

Drain to Source Voltage (Vdss) :

65 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

5900 pF @ 30 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

160W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.7mOhm @ 15A, 10V

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -12V

Vgs(th) (Max) @ Id :

2.5V @ 250µA