PMK50XP518

Hersteller :

NXP Semiconductors

Produktkategorie :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.9A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1020 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

50mOhm @ 2.8A, 4.5V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

950mV @ 250µA