YJQ55P02A

Hersteller :

YANGJIE

Produktkategorie :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

55A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

6358 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

3.2W (Ta), 38W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

8.3mOhm @ 15A, 4.5V

Supplier Device Package :

8-DFN (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 250µA