DF200R12PT4B6BOSA1

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - IGBTs - Modules

Configuration :

Three Phase Inverter

Current - Collector (Ic) (Max) :

300 A

Current - Collector Cutoff (Max) :

15 µA

IGBT Type :

Trench Field Stop

Input :

Standard

Input Capacitance (Cies) @ Vce :

12.5 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

Yes

Operating Temperature :

-40°C ~ 150°C

Package / Case :

Module

Power - Max :

1100 W

Product Status :

Active

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 200A

Voltage - Collector Emitter Breakdown (Max) :

1200 V