
FD-DF80R12W1H3_B52
- Hersteller-Teilenummer
- FD-DF80R12W1H3_B52
- Hersteller
- Infineon Technologies
- Paket/Karton
- -
- Datenblatt
- FD-DF80R12W1H3_B52
- Beschreibung
- IGBT MOD 1200V 40A 215W
- Lagerbestand
- 35000
Angebot anfordern (RFQ)
- * Kontaktname:
- * Unternehmen:
- * E-Mail:
- * Telefon:
- * Kommentar:
- * Captcha:
-
- Hersteller :
- Infineon Technologies
- Produktkategorie :
- Discrete Semiconductor Products > Transistors - IGBTs - Modules
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 40 A
- Current - Collector Cutoff (Max) :
- 1 mA
- IGBT Type :
- Trench Field Stop
- Input :
- Standard
- Input Capacitance (Cies) @ Vce :
- 235 nF @ 25 V
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- Yes
- Operating Temperature :
- -40°C ~ 125°C
- Package / Case :
- Module
- Power - Max :
- 215 W
- Product Status :
- Active
- Supplier Device Package :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 40A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
- Datenblätter
- FD-DF80R12W1H3_B52