FD-DF80R12W1H3_B52

Hersteller-Teilenummer
FD-DF80R12W1H3_B52
Hersteller
Infineon Technologies
Paket/Karton
-
Datenblatt
FD-DF80R12W1H3_B52
Beschreibung
IGBT MOD 1200V 40A 215W
Lagerbestand
35000

Angebot anfordern (RFQ)

* Kontaktname:
* Unternehmen:
* E-Mail:
* Telefon:
* Kommentar:
* Captcha:
loading...
Hersteller :
Infineon Technologies
Produktkategorie :
Discrete Semiconductor Products > Transistors - IGBTs - Modules
Configuration :
Single
Current - Collector (Ic) (Max) :
40 A
Current - Collector Cutoff (Max) :
1 mA
IGBT Type :
Trench Field Stop
Input :
Standard
Input Capacitance (Cies) @ Vce :
235 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 125°C
Package / Case :
Module
Power - Max :
215 W
Product Status :
Active
Supplier Device Package :
Module
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datenblätter
FD-DF80R12W1H3_B52

Herstellerbezogene Produkte

Katalogbezogene Produkte

Ähnliche Produkte