TPAR3J S1G

Fabricante :

Taiwan Semiconductor

Categoría de producto :

Discrete Semiconductor Products > Diodes - Rectifiers - Single

Capacitance @ Vr, F :

58pF @ 4V, 1MHz

Current - Average Rectified (Io) :

3A

Current - Reverse Leakage @ Vr :

10 µA @ 600 V

Diode Type :

Avalanche

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-277, 3-PowerDFN

Product Status :

Active

Reverse Recovery Time (trr) :

120 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

TO-277A (SMPC)

Voltage - DC Reverse (Vr) (Max) :

600 V

Voltage - Forward (Vf) (Max) @ If :

1.55 V @ 3 A