PDTC114EQB-QZ

Fabricante :

Nexperia

Categoría de producto :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V

Frequency - Transition :

230 MHz

Mounting Type :

Surface Mount, Wettable Flank

Package / Case :

3-XDFN Exposed Pad

Power - Max :

340 mW

Product Status :

Active

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

DFN1110D-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V