BY329-1200,127

Référence fabricant #
BY329-1200,127
Fabricant
NXP Semiconductors
Colis/Boîte
-
Fiche technique
BY329-1200,127
Description
DIODE GEN PURP 1.2KV 8A TO220AC
Stock
35000

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Fabricant :
NXP Semiconductors
Catégorie de produit :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
8A
Current - Reverse Leakage @ Vr :
1 mA @ 1000 V
Diode Type :
Standard
Mounting Type :
Through Hole
Operating Temperature - Junction :
150°C (Max)
Package / Case :
TO-220-2
Product Status :
Obsolete
Reverse Recovery Time (trr) :
135 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TO-220AC
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
1.85 V @ 20 A
Fiches techniques
BY329-1200,127

Produits liés au fabricant

Produits liés au catalogue

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • SMC Diode Solutions
    STANDARD RECTIFIER 1000V SOD-123
  • Diodes Incorporated
    DIODE SCHOTTKY 30V 200MA SOT23-3
  • onsemi
    DIODE GEN PURP 100V 200MA SOD123
  • Comchip Technology
    DIODE GEN PURP 1KV 1A DO41

Produits associés

Partie Fabricant Stock Description
BY329-1000,127 NXP Semiconductors 35,000 DIODE GEN PURP 1KV 8A TO220AC
BY329-1500S,127 NXP Semiconductors 35,000 DIODE GEN PURP 1.5KV 6A TO220AC
BY329X-1200,127 NXP Semiconductors 35,000 DIODE GEN PURP 1.2KV 8A TO220F
BY329X-1500,127 NXP Semiconductors 35,000 DIODE GEN PURP 1.5KV 6A TO220F
BY329X-1500S,127 NXP Semiconductors 35,000 DIODE GEN PURP 1.5KV 6A TO220F