BB804SF2E6327HTSA1
- Référence fabricant #
- BB804SF2E6327HTSA1
- Fabricant
- Infineon Technologies
- Colis/Boîte
- -
- Fiche technique
- BB804SF2E6327HTSA1
- Description
- DIODE VAR CAP 18V 50MA SOT-23
- Stock
- 35000
Demander un devis (RFQ)
- * Nom du contact:
- * Société:
- * Courriel:
- * Téléphone:
- * Commentaire:
- * Captcha:
-
- Fabricant :
- Infineon Technologies
- Catégorie de produit :
- Discrete Semiconductor Products > Diodes - Variable Capacitance (Varicaps, Varactors)
- Capacitance @ Vr, F :
- 47.5pF @ 2V, 1MHz
- Capacitance Ratio :
- 1.71
- Capacitance Ratio Condition :
- C2/C8
- Diode Type :
- 1 Pair Common Cathode
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 125°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Product Status :
- Obsolete
- Q @ Vr, F :
- 200 @ 2V, 100MHz
- Supplier Device Package :
- PG-SOT23
- Voltage - Peak Reverse (Max) :
- 18 V
- Fiches techniques
- BB804SF2E6327HTSA1
Produits liés au fabricant
Produits liés au catalogue
Produits associés
| Partie | Fabricant | Stock | Description |
|---|---|---|---|
| BB804,215 | NXP Semiconductors | 35,000 | DIODE VHF VAR CAP DUAL SOT23 |
| BB804SF1E6327 | Infineon Technologies | 35,000 | VARIABLE CAPACITANCE DIODE |
| BB804SF1E6327HTSA1 | Infineon Technologies | 35,000 | DIODE VAR CAP 18V 50MA SOT-23 |
| BB804SF2E6327 | Infineon Technologies | 72,930 | VARIABLE CAPACITANCE DIODE |
| BB8062N | TE Connectivity Laird | 35,000 | WHIP MC 1/2 806-866MHZ 2.4 BK |
| BB8063 | TE Connectivity Laird | 35,000 | RF ANT 836MHZ WHIP STR NMO BASE |
| BB8063S | TE Connectivity Laird | 35,000 | RF ANT 836MHZ WHIP STR NMO BASE |
| BB8065C | TE Connectivity Laird | 35,000 | RF ANT 836MHZ WHIP STR BASE MT |
| BB8065CN | TE Connectivity Laird | 35,000 | WHIP MC CC 806-866MHZ 5 BK NGP |
| BB8065CNS | TE Connectivity Laird | 35,000 | WHIP MC CC 806-866MHZ 5 BK NGP |
| BB8065CR | TE Connectivity Laird | 35,000 | RF ANT 836MHZ WHIP STR NMO BASE |
| BB8065CS | TE Connectivity Laird | 35,000 | RF ANT 836MHZ WHIP STR NMO BASE |
