BF517E6327

Fabricant :

Infineon Technologies

Catégorie de produit :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

25mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2mA, 1V

Frequency - Transition :

2.5GHz

Gain :

13dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3.5dB @ 800MHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

280mW

Product Status :

Active

Supplier Device Package :

-

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V