MDS60L

Fabricant :

Microsemi

Catégorie de produit :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 500mA, 5V

Frequency - Transition :

1.03GHz ~ 1.09GHz

Gain :

10dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55AW

Power - Max :

120W

Product Status :

Obsolete

Supplier Device Package :

55AW

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

65V