MS2322

Fabricant :

Microsemi

Catégorie de produit :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

1.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 100mA, 5V

Frequency - Transition :

1.025GHz ~ 1.15GHz

Gain :

10dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

M115

Power - Max :

87.5W

Product Status :

Obsolete

Supplier Device Package :

M115

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

65V