BSR12,215

Fabricant :

NXP Semiconductors

Catégorie de produit :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA, 1V

Frequency - Transition :

1.5GHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Obsolete

Supplier Device Package :

SOT-23 (TO-236AB)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

15 V