DRDN010W-7

Fabricant :

Diodes Incorporated

Catégorie de produit :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA, 1V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200 mW

Product Status :

Obsolete

Supplier Device Package :

SOT-363

Transistor Type :

NPN + Diode (Isolated)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

18 V