TK190E65Z,S1X

Fabricant :

Toshiba Electronic Devices and Storage Corporation

Catégorie de produit :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 300 V

Mounting Type :

Through Hole

Operating Temperature :

150°C

Package / Case :

TO-220-3

Power Dissipation (Max) :

130W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.5A, 10V

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 610µA