TK11S10N1L,LQ

Fabricant :

Toshiba Electronic Devices and Storage Corporation

Catégorie de produit :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

850 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

65W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

28mOhm @ 5.5A, 10V

Supplier Device Package :

DPAK+

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 100µA