G30N02T

Fabricant :

Goford Semiconductor

Catégorie de produit :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

900 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

40W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

13mOhm @ 20A, 4.5V

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.2V @ 250µA