FQA10N80

Fabricant :

onsemi

Catégorie de produit :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.8A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

71 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2700 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation (Max) :

240W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

1.05Ohm @ 4.9A, 10V

Supplier Device Package :

TO-3P

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA