FF50R12RT4HOSA1

Fabricant :

Infineon Technologies

Catégorie de produit :

Discrete Semiconductor Products > Transistors - IGBTs - Modules

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

50 A

Current - Collector Cutoff (Max) :

1 mA

IGBT Type :

Trench Field Stop

Input :

Standard

Input Capacitance (Cies) @ Vce :

2.8 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

No

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

285 W

Product Status :

Active

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 50A

Voltage - Collector Emitter Breakdown (Max) :

1200 V