IGD10N65T6ARMA1

Fabricant :

Infineon Technologies

Catégorie de produit :

Discrete Semiconductor Products > Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

23 A

Current - Collector Pulsed (Icm) :

42.5 A

Gate Charge :

27 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

75 W

Product Status :

Not For New Designs

Reverse Recovery Time (trr) :

-

Supplier Device Package :

PG-TO252-3

Switching Energy :

200µJ (on), 70µJ (off)

Td (on/off) @ 25°C :

30ns/106ns

Test Condition :

400V, 8.5A, 47Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 8.5A

Voltage - Collector Emitter Breakdown (Max) :

650 V