GT30N135SRA,S1E
- Référence fabricant #
- GT30N135SRA,S1E
- Colis/Boîte
- -
- Fiche technique
- GT30N135SRA,S1E
- Description
- D-IGBT TO-247 VCES=1350V IC=30A
- Stock
- 46
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- Fabricant :
- Toshiba Electronic Devices and Storage Corporation
- Catégorie de produit :
- Discrete Semiconductor Products > Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 60 A
- Current - Collector Pulsed (Icm) :
- 120 A
- Gate Charge :
- 270 nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-247-3
- Power - Max :
- 348 W
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-247
- Switching Energy :
- -, 1.3mJ (off)
- Td (on/off) @ 25°C :
- -
- Test Condition :
- 300V, 60A, 39Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 60A
- Voltage - Collector Emitter Breakdown (Max) :
- 1350 V
- Fiches techniques
- GT30N135SRA,S1E
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