BAS100ATB6_R1_00001
- 제조업체 부품 번호
- BAS100ATB6_R1_00001
- 제조업체
- PANJIT
- 포장/케이스
- -
- 데이터시트
- BAS100ATB6_R1_00001
- 설명
- SURFACE MOUNT DUAL ISOLATED OPPO
- 재고
- 4000
견적 요청(RFQ)
- * 연락처 이름:
- * 회사:
- * 이메일:
- * 전화:
- * 리뷰:
- * 확인 코드:
-
- 제조업체 :
- PANJIT
- 제품 분류 :
- Discrete Semiconductor Products > Diodes - Rectifiers - Arrays
- Current - Average Rectified (Io) (per Diode) :
- 400mA
- Current - Reverse Leakage @ Vr :
- 1 µA @ 100 V
- Diode Configuration :
- 2 Independent
- Diode Type :
- Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- SOT-563, SOT-666
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- SOT-563
- Voltage - DC Reverse (Vr) (Max) :
- 100 V
- Voltage - Forward (Vf) (Max) @ If :
- 810 mV @ 400 mA
- 데이터 목록
- BAS100ATB6_R1_00001
제조업체 관련 제품
디렉토리 관련 제품
관련 제품
부분 | 제조업체 | 재고 | 설명 |
---|---|---|---|
BAS100AS-AU_R1_000A1 | PANJIT | 13,469 | SOD-123, SKY |
BAS100AS_R1_00001 | PANJIT | 22,142 | SOD-123, SKY |
BAS100CS-AU_R1_000A1 | PANJIT | 120,868 | SOD-323, SKY |
BAS100CS_R1_00001 | PANJIT | 87,959 | SOD-323, SKY |
BAS101,215 | NXP Semiconductors | 35,000 | NEXPERIA BAS101 - RECTIFIER DIOD |
BAS101S,215 | NXP Semiconductors | 35,000 | DIODE SW HI-VOLT DUAL SOT-23 |
BAS116 | Diodes Incorporated | 35,000 | DIODE GEN PURP 85V 215MA SOT23-3 |
BAS116 RFG | Taiwan Semiconductor | 35,000 | DIODE GEN PURP 75V 200MA SOT23 |
BAS116,215 | Nexperia | 58,215 | DIODE GEN PURP 75V 215MA TO236AB |
BAS116,235 | NXP Semiconductors | 35,000 | DIODE GEN PUR 75V 0.215A TO236AB |
BAS116-7-F | Diodes Incorporated | 26,044 | DIODE GEN PURP 85V 215MA SOT23-3 |
BAS116-7-G | Diodes Incorporated | 35,000 | DIODE GEN PURP 85V SOT23-3 |
BAS116-AU_R1_000A1 | PANJIT | 35,000 | SURFACE MOUNT, LOW LEAKAGE SWITC |
BAS116-TP | Micro Commercial Components (MCC) | 71 | 225MWSWITCHINGDIODESSOT-23 |
BAS116E6327HTSA1 | Infineon Technologies | 61,023 | DIODE GEN PURP 80V 250MA SOT23-3 |