TK190E65Z,S1X

제조업체 부품 번호
TK190E65Z,S1X
제조업체
Toshiba Electronic Devices and Storage Corporation
포장/케이스
-
데이터시트
TK190E65Z,S1X
설명
650V DTMOS VI TO-220 190MOHM
재고
200

견적 요청(RFQ)

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제조업체 :
Toshiba Electronic Devices and Storage Corporation
제품 분류 :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
15A (Ta)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1370 pF @ 300 V
Mounting Type :
Through Hole
Operating Temperature :
150°C
Package / Case :
TO-220-3
Power Dissipation (Max) :
130W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
190mOhm @ 7.5A, 10V
Supplier Device Package :
TO-220
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 610µA
데이터 목록
TK190E65Z,S1X

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