TK17E80W,S1X
견적 요청(RFQ)
- * 연락처 이름:
- * 회사:
- * 이메일:
- * 전화:
- * 리뷰:
- * 확인 코드:
-
- 제조업체 :
- Toshiba Electronic Devices and Storage Corporation
- 제품 분류 :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 17A (Ta)
- Drain to Source Voltage (Vdss) :
- 800 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050 pF @ 300 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 180W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 290mOhm @ 8.5A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 850µA
- 데이터 목록
- TK17E80W,S1X
제조업체 관련 제품
디렉토리 관련 제품
관련 제품
| 부분 | 제조업체 | 재고 | 설명 |
|---|---|---|---|
| TK1705800000G | Amphenol Anytek | 35,000 | TERM BLK 17P SIDE ENTRY 5MM PCB |
| TK170V65Z,LQ | Toshiba Electronic Devices and Storage Corporation | 2,470 | MOSFET N-CH 650V 18A 5DFN |
| TK17A65W,S5X | Toshiba Electronic Devices and Storage Corporation | 35,000 | X35 PB-F POWER MOSFET TRANSISTOR |
| TK17A65W5,S5X | Toshiba Electronic Devices and Storage Corporation | 35,000 | X35 PB-F POWER MOSFET TRANSISTOR |
| TK17A80W,S4X | Toshiba Electronic Devices and Storage Corporation | 18 | MOSFET N-CH 800V 17A TO220SIS |
| TK17E65W,S1X | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 650V 17.3A TO220 |
| TK17N65W,S1F | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 650V 17.3A TO247 |
| TK17V65W,LQ | Toshiba Electronic Devices and Storage Corporation | 7,475 | X35 PB-F POWER MOSFET TRANSISTOR |
