TK090A65Z,S4X
견적 요청(RFQ)
- * 연락처 이름:
- * 회사:
- * 이메일:
- * 전화:
- * 리뷰:
- * 확인 코드:
-
- 제조업체 :
- Toshiba Electronic Devices and Storage Corporation
- 제품 분류 :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Ta)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2780 pF @ 300 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation (Max) :
- 45W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 90mOhm @ 15A, 10V
- Supplier Device Package :
- TO-220SIS
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 1.27mA
- 데이터 목록
- TK090A65Z,S4X
제조업체 관련 제품
디렉토리 관련 제품
관련 제품
| 부분 | 제조업체 | 재고 | 설명 |
|---|---|---|---|
| TK0905800000G | Amphenol Anytek | 35,000 | TERM BLK 9POS SIDE ENTRY 5MM PCB |
| TK090E65Z,S1X | Toshiba Electronic Devices and Storage Corporation | 200 | 650V DTMOS VI TO-220 90MOHM |
| TK090N65Z,S1F | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 650V 30A TO247 |
| TK090U65Z,RQ | Toshiba Electronic Devices and Storage Corporation | 3,981 | DTMOS VI TOLL PD=230W F=1MHZ |
| TK090Z65Z,S1F | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 650V 30A TO247-4L |
| TK099V65Z,LQ | Toshiba Electronic Devices and Storage Corporation | 1,250 | MOSFET N-CH 650V 30A 5DFN |
