FZ1200R45HL3BPSA1

제조업체 부품 번호
FZ1200R45HL3BPSA1
제조업체
Infineon Technologies
포장/케이스
-
데이터시트
FZ1200R45HL3BPSA1
설명
IGBT MODULE 4500V 1200A
재고
35000

견적 요청(RFQ)

* 연락처 이름:
* 회사:
* 이메일:
* 전화:
* 리뷰:
* 확인 코드:
loading...
제조업체 :
Infineon Technologies
제품 분류 :
Discrete Semiconductor Products > Transistors - IGBTs - Modules
Configuration :
Single Switch
Current - Collector (Ic) (Max) :
1200 A
Current - Collector Cutoff (Max) :
5 mA
IGBT Type :
Trench Field Stop
Input :
Standard
Input Capacitance (Cies) @ Vce :
280 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
No
Operating Temperature :
-40°C ~ 150°C
Package / Case :
Module
Power - Max :
15000 W
Product Status :
Active
Supplier Device Package :
Module
Vce(on) (Max) @ Vge, Ic :
2.8V @ 15V, 1200A
Voltage - Collector Emitter Breakdown (Max) :
4500 V
데이터 목록
FZ1200R45HL3BPSA1

제조업체 관련 제품

디렉토리 관련 제품

관련 제품

부분 제조업체 재고 설명
FZ1200R12HE4HOSA2 Infineon Technologies 1 FZ1200R12 - IGBT MODULE
FZ1200R12HE4PHPSA1 Infineon Technologies 35,000 IGBT MODULE 1200V 1825A
FZ1200R12HP4HOSA2 Infineon Technologies 35,000 IGBT MOD 1200V 1790A 7150W
FZ1200R12KE3NOSA1 Infineon Technologies 58 IGBT MODULE
FZ1200R12KF4NOSA1 Infineon Technologies 35,000 IGBT MODULE 1200V 1200A
FZ1200R12KF5NDSA1 Infineon Technologies 35,000 IGBT MODULE 1200V 1200A
FZ1200R12KF5NOSA1 Infineon Technologies 35,000 IGBT MODULE 1200V 1200A
FZ1200R12KL4CNOSA1 Infineon Technologies 35,000 IGBT MODULE 1200V 1200A
FZ1200R16KF4S1NOSA1 Infineon Technologies 1 FZ1200R16 - INSULATED GATE BIPOL
FZ1200R17HE4HOSA2 Infineon Technologies 35,000 IGBT MOD 1700V 1200A 7800W
FZ1200R17HE4PHPSA1 Infineon Technologies 35,000 IGBT MODULE 1700V 1200A
FZ1200R17HP4B2BOSA2 Infineon Technologies 35,000 IGBT MOD 1700V 1200A 7800W
FZ1200R17HP4HOSA2 Infineon Technologies 35,000 IGBT MOD 1700V 1200A 7800W
FZ1200R17KE3B2NOSA1 Infineon Technologies 35,000 IGBT MODULE 1700V 1200A
FZ1200R17KF4CNOSA1 Infineon Technologies 534 FZ1200R17 - INSULATED GATE BIPOL