HN4B01JE(TE85L,F)
- Mfr.Part #
- HN4B01JE(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- HN4B01JE(TE85L,F)
- Description
- TRANS NPN/PNP 50V 0.15A ESV PLN
- Stock
- 3594
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays
- Current - Collector (Ic) (Max) :
- 150mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10MA, 100MA
- Frequency - Transition :
- 80MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-553
- Power - Max :
- 100mW
- Product Status :
- Active
- Supplier Device Package :
- ESV
- Transistor Type :
- NPN, PNP (Emitter Coupled)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- HN4B01JE(TE85L,F)
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HN4B04J(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | TRANS NPN/PNP 30V 0.5A SMV |
| HN4B102J(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F POWER TRANSISTOR SMV MOQ=30 |
