BFR35APE6327

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

45mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA, 8V

Frequency - Transition :

5GHz

Gain :

16dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

280mW

Product Status :

Active

Supplier Device Package :

-

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V